sm d t yp e i c ww w .kexin.com.c n 1 sm d t yp e mosfe t 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 1 . gat e 2 . s ourc e 3 . d r a i n features v ds (v) = 30v i d = 4 a r ds(on) 55m ( v g s = 10v ) r ds(on) 70m ( v g s = 4.5v ) r ds(on) 110m ( v g s = 2.5v ) n-channel enhancement m ode field effect transistor absolute maximum r atings ta = 25 t i n u g n i t a r l o b m y s r e t e m a r a p v e g a t l o v e c r u o s - n i a r d d s 30 v v e g a t l o v e c r u o s - e t a g g s 12 v continuous drain current ta=25 4 ta=70 3.4 i t n e r r u c n i a r d d e s l u p d m 15 po w er d issipatio n t a=2 5 1.4 ta=70 1 therma l r esistance. j unction-to-ambient r ja 125 /w thermal resistance.junction-to-case r jc 80 /w junction and storage temperature range t j , t s t g - 55 to 150 i d p d a w ao 3 4 0 2 ( k o 3 4 0 2 )
w w w . k exi n . c o m . c n 2 s m d ty p e i c s m d ty p e m os f e t electrical characteristic s ta = 25 parameter s y m bol testcondition s min t y p max unit drain-sourc e breakdo w n v oltage v dss i d =250 a , v g s = 0 v 30 v v d s = 24v , v g s 1 v 0 = v d s = 24v , v g s = 0 v , tj = 5 5 5 gate-body leakag e current i g s s v d s = 0v , v g s = 12v 100 na v e g a t l o v d l o h s e r h t e t a g g s ( t h ) v d s = v g s i d =250 a 0.6 1 1.4 v v g s = 10v , i d 5 5 5 4 a 4 = v g s = 10v , i d = 4 a t j =125 66 80 v g s = 4. 5v , i d 0 7 5 5 a 3 = m v g s = 2. 5v , i d 0 1 1 3 8 a 2 = m i t n e r r u c n i a r d e t a t s n o d ( on ) v g s = 4. 5v , v d s a 0 1 v 5 = forw ard t ransconductanc e g fs v d s = 5v , i d s 8 a 4 = c e c n a t i c a p a c t u p n i iss 390 pf c e c n a t i c a p a c t u p t u o o s s 54.5 pf rev ers e t rans f e r capaci t anc e c r s s 41 pf r e c n a t s i s e r e t a g g v g s = 0v , v d s 3 z h m 1 = f , v 0 = q e g r a h c e t a g l a t o t g 4.34 nc q e g r a h c e c r u o s e t a g g s 0.6 nc q e g r a h c n i a r d e t a g g d 1.38 nc t e m i t y a l e d n o - n r u t d ( o n ) 3.3 ns t e m i t e s i r n o - n r u t r 1 ns t e m i t y a l e d f f o - n r u t d ( o f f ) 21.7 ns t e m i t l l a f f f o - n r u t f 2.1 ns b od y diod e rev ers e rec ov er y t im e t r r i f = 4a , d i /d t = 100a / s 12 ns body diod e revers e recover y charge q r r i f = 4a , d i /d t = 100a / s 6.3 nc maximum b ody -diod e continuou s current i s 2.5 a v e g a t l o v d r a w r o f e d o i d s d i s = 1a , v g s v 1 8 . 0 v 0 = v g s = 10v , v d s = 15v , r l =3.75 ,r g e n = 6 r ds(on) s t at i c dr ain-s ou rc e on-re sis t anc e i dss zero gate voltage drain current a m v g s = 0v , v d s = 15v , f= 1mh z v g s = 4. 5v , v d s = 15v , i d =-4a ao 3 4 0 2 ( k o 3 4 0 2 ) m a r k i n g m a r k i n g a 2*
s m d ty p e w w w . ke x in . com . c n 3 m osfe t ao 3 4 0 2 ( k o 3 4 0 2 ) ty pic al c har ac t er is it ic s 0 3 6 9 12 15 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics i d ( a ) v gs =2v 2.5v 3v 4.5v 10v 0 2 4 6 8 10 0 0.5 1 1.5 2 2.5 3 3.5 v gs (volts) figure 2: transfer characteristics i d ( a ) 0 25 50 75 100 125 150 0 2 4 6 8 10 i d (a) figure 3: on-resistance vs. drain current and gate voltage r d s(o n ) ( m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s ( a ) 25c 125c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature n o rm ali ze d o n - r es i sta n c e v gs =2.5v v gs =10v v gs =4.5v 0 50 100 150 200 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage r d s(o n ) ( m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v v gs =10v i d =2a 25c 125c
s m d ty p e w w w . k exi n . co m . c n 4 m osfe t ao 3 4 0 2 ( k o 3 4 0 2 ) ty pic al c har ac t er is it ic s 0 1 2 3 4 5 0 1 2 3 4 5 q g (nc) figure 7: gate-charge characteristics v g s ( v o l t s ) 0 100 200 300 400 500 600 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics c a p ac i ta n ce ( pf ) c iss 0 5 10 15 20 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) p o w e r ( w ) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z j a n o rm a li ze d t r a n sie n t th e rm al r es i sta n c e c oss c r ss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d ( a m p s ) figure 9: maximum forward biased safe operating area (note e) 100 s 1 0 m s 1ms 0 .1 s 1s 10s d c r ds(on) limited t j(max) =150c t a =25c v ds =15v i d =4a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =90c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 s
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